Yoshiharu Enta

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Speaker, Author, Co-Author

Sat. Mar 19, 2016 3:30 PM - 6:00 PM S223 (S2)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19p-S223-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

5:00 PM - 5:15 PM

[19p-S223-7] Effect of residual gas upon ring-structure formation inside voids by thermal desorption of SiO₂ layer

〇Yoshiharu Enta¹, Shodai Osanai¹, Takahito Ogasawara¹ (1.Hirosaki Univ.)