Wataru Fukushima

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 2:15 PM - 5:45 PM H113 (H)

Oral presentation
| 15 Crystal Engineering
| 15.8 Crystal evaluation, impurities and crystal defects

[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

4:15 PM - 4:30 PM

△ [20p-H113-8] Oxygen effect on dislocation multiplication in a silicon crystal

〇Wataru Fukushima¹, Bing Gao², Hirofumi Harada², Yshiji Miyamura², Satoshi Nakano², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)