Shingo Kawachi

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 9:00 AM - 12:15 PM S221 (S2)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[20a-S221-1~12] 13.3 Insulator technology

9:15 AM - 9:30 AM

[20a-S221-2] First principles study on the strain dependence of thermal oxidation and hydrogen annealing effect at Si/SiO₂ interface in V-MOSFET

〇(M1)Shingo Kawachi¹, Hiroki Shirakawa¹, Masaaki Araidai^2,1,5, Hiroyuki Kageshima^3,5, Tetsuo Endoh^4,5, Kenji Shiraishi^2,1,5 (1.Nagoya Univ., 2.IMaSS, 3.Shimane Univ., 4.Tohoku Univ., 5.JST-ACCEL)