Takumi Moriyama

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 1:00 PM - 6:45 PM H111 (H)

Oral presentation
| 6 Thin Films and Surfaces
| 6.3 Oxide electronics

[21p-H111-1~22] 6.3 Oxide electronics

3:15 PM - 3:30 PM

△ [21p-H111-10] Formative Mechanism of Conducting Path in Resistive Random Access Memory
~ Electronic State Analysis for Various NiO Surfaces ~

〇(DC)Takumi Moriyama^1,4, Takahiro Yamasaki², Takahisa Ohno^2,3, Satoru Kishida^1,4, Kentaro Kinoshita^1,4 (1.Tottori Univ., 2.NIMS, 3.IIS, Univ. of Tokyo, 4.TiFREC)