Yasushi Iyechika

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Speaker, Author, Co-Author

Tue. Mar 22, 2016 1:15 PM - 3:00 PM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[22p-H121-1~7] 15.4 III-V-group nitride crystals

1:45 PM - 2:00 PM

[22p-H121-3] Analysis of Reflectance Monitoring of InGaN/GaN MQW Growth with Temperature Step

〇Yasushi Iyechika¹ (1.NuFlare Technology)

2:00 PM - 2:15 PM

[22p-H121-4] InGaN/GaN MQW Grown at 500 Torr on 200 mm Si Wafer by Fast Rotating Single-Wafer MOCVD

〇Yasushi Iyechika¹, Yoshitaka Ishikawa¹, Yuusuke Sato¹, Hideshi Takahashi¹ (1.NuFlare Technology)