[20a-H121-1~11] 15.4 III-V-group nitride crystals

Sun. Mar 20, 2016 8:45 AM - 11:45 AM H121 (H)

Satoshi Kamiyama(Meijo Univ.), Atsushi Yamaguchi(Kanazawa Inst. of Tech.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:45 AM - 9:00 AM

[20a-H121-1] Radiative recombination dynamics of hot carriers excited in a n-type m-plane GaN single crystal with high carrier concentration

〇Kazunobu Kojima¹, Hirotaka Ikeda², Kenji Fujito², Shigefusa Chichibu¹ (1.Tohoku University, 2.Mitsubishi Chemical Corp.)

9:00 AM - 9:15 AM

[20a-H121-2] Measurement of the absolute quantum efficiency of radiation in high quality GaN single crystals

〇Kazunobu Kojima¹, Tomomi Otomo¹, Makoto Saito^1,2, Hirotaka Ikeda², Kenji Fujito², Shigefusa Chichibu¹ (1.Tohoku University, 2.Mitsubishi Chemical Corp.)

9:15 AM - 9:30 AM

[20a-H121-3] Emission characteristics of m-plane Al_1-xIn_xN epilayers grown on a freestanding GaN substrate by MOVPE (Ⅳ)

〇Shigefusa Chichibu¹, Kazunobu Kojima¹, Yoshiki Yamazaki¹, Yoshitaka Sato², Akira Uedono³ (1.IMRAM, Tohoku Univ., 2.Futaba Corp., 3.Univ. Tsukuba)

9:30 AM - 9:45 AM

[20a-H121-4] Separation of effects of InGaN/GaN superlattice on emission characteristics of InGaN-based light-emitting diodes

〇Kohei Sugimoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ.)

9:45 AM - 10:00 AM

[20a-H121-5] Observation of InGaN surface roughness recovery using an in-situ laser scattering

〇(M1)Tetsuya Yamamoto¹, Akira Tamura¹, Kentaro Nagamatsu¹, Shugo Nitta^1,3, Yoshio Honda^1,3, Hiroshi Amano^1,2,3 (1.Nagoya Univ., 2.ARC, 3.IMaSS)

10:00 AM - 10:15 AM

[20a-H121-6] Control of Bandgap in InGaN Quantum Wells by Selective Area Diffusion of Indium and Fabrication of Optical Waveguide

〇Toshiya Yokogawa¹, Takuya Kakoi¹, Yasuhiko Imai², Shigeru Kimura² (1.Yamaguchi University, 2.JASRI)

10:30 AM - 10:45 AM

△ [20a-H121-7] Growth condition dependents of the emission wavelength in Core-Shell MQW nanowire

〇Kohei Iwase¹, Stanley Lim¹, Hiroki Shibuya¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Fac.Sci.&Tecnhol.,Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

10:45 AM - 11:00 AM

[20a-H121-8] LO phonon replica and exciton many-body effects of GaN Nanocolumns

〇Yuta Inose¹, Kazuya Kinjo¹, Kazuhiro Ema^1,2, Jun Yoshida¹, Kouji Yamano¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech.)

11:00 AM - 11:15 AM

[20a-H121-9] Analysis of Depth of Localized States on InGaN/GaN Regularly Arranged Nanocolumns

〇Kazuya Kinjo¹, Yuta Inose¹, Hikaru Satoh¹, Kazuhiro Ema^1,2, Toshihiro Nakaoka^1,2, Takao Oto¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech.)

11:15 AM - 11:30 AM

[20a-H121-10] Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals

〇Takashi Nakano¹, Kawakami Kohei¹, Yamaguchi Atsushi¹ (1.Kanazawa Inst. Tech.)

11:30 AM - 11:45 AM

[20a-H121-11] Radiative and non-radiative recombination lifetimes in GaN estimated from time-resolved PL and simultaneous PA/PL measurements

〇Kohei Kawakami¹, Takashi Nakano¹, Atsushi Yamaguchi¹ (1.Kanazawa Inst.of Tech.)

Session information