Oral presentation

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[20p-S611-1~17] 16.3 Bulk, thin-film and other silicon-based solar cells

Sun. Mar 20, 2016 1:30 PM - 6:00 PM S611 (S6)

Koji Arafune(Univ. of Hyogo), Taketoshi Matsumoto(Osaka Univ.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[20p-S611-1] Growth of Si ingots with 45 cm diameter using a crucible with 50 cm diameter by a Noncontact Crucible (NOC) furnace with 2 zone heaters

〇Kazuo Nakajima¹, Satoshi Ono¹, Yuzuru Kaneko¹, Ryota Murai¹, Katuhiko Shirasawa², Tetuo Fukuda², Hidetaka Takato² (1.JST FUTURE-PV, 2.FREA)

1:45 PM - 2:00 PM

[20p-S611-2] Distribution of dislocation density in Si ingots grown by noncontact crucible method

〇Ryota Murai¹, Kazuo Nakajima¹, Satoshi Ono¹, Yuzuru Kaneko¹ (1.JST)

2:00 PM - 2:15 PM

[20p-S611-3] The Bulk Evaluation of Monocrystalline Photovoltaic CZ Silicon Crystals
Grown from The Melt in Liquinert Quartz Crucibles

〇TETSUO FUKUDA¹, YUKICHI HORIOKA², KATSUHIKO TANAHASHI¹, SHARAMUJAN SUMAI¹, KATSUHIKO SHIRASAWA¹, HIDETAKA TAKATO¹ (1.AIST, 2.FTB Research Institute)

2:15 PM - 2:30 PM

[20p-S611-4] Effect of Oxide Precipitation by Annealing Process on Change in Carrier Lifetime of N-type CZ Silicon

〇Takuto Kojima¹, Ryota Suzuki¹, Atsushi Ogura¹, Tomihisa Tachibana², Yoshio Ohshita³, Eiichi Nishijima⁴, Isao Masada⁴, Shinji Iida⁴, Shoji Tachibana⁴ (1.Meiji Univ., 2.FREA, 3.Toyota Tech. Inst., 4.Tokuyama Corporation)

2:30 PM - 2:45 PM

[20p-S611-5] Impurity control of crystalline silicon for solar cells by using functional defects layer

〇(B)Yusuke Hayama¹, Isao Takahashi¹, Noritaka Usami¹ (1.Nagoya Univ.)

2:45 PM - 3:00 PM

[20p-S611-6] Investigation between grain boundary structure and dislocation generation in crystalline Si

〇(M1)TAISHO IWATA¹, ISAO TAKAHASHI¹, NORITAKA USAMI¹ (1.Nagoya Univ.)

3:00 PM - 3:15 PM

[20p-S611-7] Growth of a high-performance multicrystalline silicon ingot by using a Si beads nucleation layer

〇(B)Tetsurou Muramatsu¹, Isao Takahashi¹, G. Anandha babu¹, Noritaka Usami¹ (1.Nagoya Univ.)

3:15 PM - 3:30 PM

△ [20p-S611-8] Influence of grain boundaries on stress concentration in multicrystalline Si for solar cells

〇Shota Sugioka¹, Kentaro Kutsukake¹, Momoko Deura¹, Yutaka Ohno¹, Ichiro Yonenaga¹ (1.IMR, Tohoku Univ.)

3:30 PM - 3:45 PM

[20p-S611-9] Imaging of Residual Strain in Large Crystal of Multi-crystalline Silicon

〇Yoshiki Shimomura¹, Motoharu Yamada¹, Masayuki Fukuzawa¹ (1.Kyoto Inst. of Tech.)

3:45 PM - 4:00 PM

△ [20p-S611-10] Photoluminescence due to Early Stage of Oxygen Precipitates in Multicrystalline Si for Solar Cells

〇(M1)fumito higuchi¹, takumi uno¹, michio tajima¹, atsushi ogura¹ (1.Meiji Univ.)

4:15 PM - 4:30 PM

▼ [20p-S611-11] Effect and Optimization of Chemical Cleaning before Deposition of Cat-CVD Passivation Films to Realize Extremely Low Surface Recombination Velocity on Flat and Textured Structures

〇(PC)Cong Thanh Nguyen¹, Koichi Koyama¹, Shigeki Terashima¹, Chikao Okamoto², Shuichiro Sugiyama², Keisuke Ohdaira¹, Hideki Matsumura¹ (1.JAIST (Japan Adv. Inst. Sci. & Tech.), 2.SHARP Corporation)

4:30 PM - 4:45 PM

△ [20p-S611-12] Characteristic of SiN Passivation by post plasma treatment for Crystalline Si Solar Cells

〇yoshihiro yamashita¹, norihiro ikeno¹, takuto kojima¹, takuya hiyama¹, atsushi ogura¹ (1.Meiji Univ.)

4:45 PM - 5:00 PM

[20p-S611-13] Temperature-Dependent Effective Lifetime Measurement of Crystalline Silicon Passivated by Amorphous Silicon Oxide / Doped Layer Stack Structure

〇masahiro inaba¹, Shinsuke Miyajima¹ (1.Tokyo Tech.)

5:00 PM - 5:15 PM

[20p-S611-14] Temperature-Dependent Effective Minority Carrier Lifetime Measurement of Crystalline Silicon Passivated by Aluminium oxide

〇(M1)takahisa masuda¹, masahiro inaba¹, shinsuke miyajima¹ (1.Dept. Physical Electronics, Tokyo Tech)

5:15 PM - 5:30 PM

[20p-S611-15] Effect of Field Effect Passivation on Temperature Dependence of Effective Minority Carrier Lifetime of Crystalline Silicon

〇Shinsuke Miyajima¹, Masahiro Inaba¹, Takahisa Masuda¹, Yumiko Kobayashi², Tatsuro Watahiki², Hidetada Tokioka² (1.Tokyo Tech, 2.Mitsubishi Electric Corp.)

5:30 PM - 5:45 PM

[20p-S611-16] Fabrication of AlOx thin film by Spray Pyrolysis Coating
using the novel Aluminum Compound and its passivation property

〇Koichiro Inaba¹, Koji Toyota¹, Toshio Naka¹, Shinsuke Miyajima² (1.Tosoh Finechem, Ltd, 2.Dept. Physical Electronics, Tokyo Tech.)

5:45 PM - 6:00 PM

[20p-S611-17] Comparison between LTEM and C-V measurements for the analysis of passivation film quality

〇Akira Ito¹, Toshimitsu Mochizuki³, Hidetoshi Nakanishi¹, Katsuhito Tanahashi³, Iwao Kawayama², Masayoshi Tonouchi², Katsuhiko Shirasawa³, Hidetaka Takato³ (1.SCREEN Holdings Co., Ltd., 2.ILE Osaka Univ., 3.FREA, AIST)

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