Symposium

[19a-S221-1~5] Recent progress and future prospects of functional 2-dimensional materials

Sat. Mar 19, 2016 9:45 AM - 12:00 PM S221 (S2)

Eisuke Tokumitsu(JAIST)

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9:45 AM - 10:00 AM

▲ [19a-S221-1] Opening Address

〇Eisuke Tokumitsu¹, Yongmin Kim² (1.JAIST, 2.Dankook Univ.)

10:00 AM - 10:30 AM

▲ [19a-S221-2] Application of Layered Chalcogenide Materials to Atomic Layer Electronics

〇Keiji Ueno¹ (1.Saitama Univ.)

10:30 AM - 11:00 AM

▲ [19a-S221-3] Electronic and optical properties of monoclinic MoTe₂

〇Heejun Yang¹, Suyeon Cho², Jaeyoon Baik⁵, K. J. Chang³, Kazu Suenaga⁴, Sung Wng Kim¹, Young Hee Lee² (1.Department of Energy Science, Sungkyunkwan University (SKKU), 2.IBS Center for Integrated Nanostructure Physics (CINAP), Sungkyunkwan University (SKKU), 3.Department of Physics, KAIST, 4.National Institute of Advanced Industrial Science and Technology (AIST), 5.Pohang Accelerator Laboratory, POSTECH)

11:00 AM - 11:30 AM

▲ [19a-S221-4] Valley physics in 2D crystals of transition metal dichalcogenides

〇Yijin Zhang¹, Yoshihiro Iwasa^1,2 (1.Univ. Tokyo, 2.RIKEN)

11:30 AM - 12:00 PM

▲ [19a-S221-5] Selective deformation of monolayer MoS₂ by illuminating laser
and magnetotransport of 2D materials probed up to 60 T

〇Sung Ho Jhang¹, Sung Won Kim¹, Jeong Hyeon Na¹ (1.Konkuk Univ.)

Symposium

[19p-S221-1~8] Recent progress and future prospects of functional 2-dimensional materials

Sat. Mar 19, 2016 1:45 PM - 5:30 PM S221 (S2)

Yongmin Kim(Dankook Univ.), Kazuhito Tsukagoshi(NIMS)

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1:45 PM - 2:15 PM

▲ [19p-S221-1] Atomically thin hetero-structural semiconductors

〇Kazuhito Tsukagoshi¹ (1.NIMS)

2:15 PM - 2:45 PM

▲ [19p-S221-2] Oxidation of 2-Dimensional Semiconductors and Its Implication towards Applications

〇Sunmin Ryu¹ (1.POSTECH)

2:45 PM - 3:15 PM

▲ [19p-S221-3] CVD growth of atomically-thin transition metal dichalcogenides and their heterostructures

〇Yasumitsu Miyata^1,2 (1.Tokyo Metropolitan Univ., 2.JST-PRESTO)

3:15 PM - 3:45 PM

▲ [19p-S221-4] Two-dimensional van der Waals Heterostructures for Advanced Electronics

〇Gwan-Hyoung Lee¹ (1.Yonsei Univ.)

4:00 PM - 4:30 PM

▲ [19p-S221-5] Surface engineering of two-dimensional atomic crystals for performance enhancement and its application

〇Young-Jun Yu¹ (1.Electronics and Telecommunications Research Institute (ETRI))

4:30 PM - 4:45 PM

▼ [19p-S221-6] Single-Layer WS₂ Phototransistor with Multi-Layer Graphene Electrodes
on a Flexible Parylene Substrate

〇(D)Adha Sukma Aji¹, Toshiaki Shiiba¹, Kenjiro Fukuda^2,3, Hiroki Ago^1,3,4 (1.Graduate School of Engineering Sciences, Kyushu Univ., 2.Thin-Film Device Laboratory, RIKEN, 3.PRESTO-JST, 4.Institute for Materials Chemistry and Engineering, Kyushu Univ.)

4:45 PM - 5:00 PM

▼ [19p-S221-7] Defect position analysis in MoS₂ FETs by random telegraphic signals

〇Nan Fang¹, Kosuke Nagashio¹, Akira Toriumi¹ (1.Tokyo Univ.)

5:00 PM - 5:30 PM

▲ [19p-S221-8] Research development of materials and innovative devices using atomically thin 2D functional films for ubiquitous sensing

〇Atsushi Ando¹ (1.AIST)

Sessions

Symposium » Recent progress and future prospects of functional 2-dimensional materials

[19a-S221-1~5] Recent progress and future prospects of functional 2-dimensional materials

▲ [19a-S221-1] Opening Address

▲ [19a-S221-2] Application of Layered Chalcogenide Materials to Atomic Layer Electronics

▲ [19a-S221-3] Electronic and optical properties of monoclinic MoTe₂

▲ [19a-S221-4] Valley physics in 2D crystals of transition metal dichalcogenides

▲ [19a-S221-5] Selective deformation of monolayer MoS₂ by illuminating laser
and magnetotransport of 2D materials probed up to 60 T

[19p-S221-1~8] Recent progress and future prospects of functional 2-dimensional materials

▲ [19p-S221-1] Atomically thin hetero-structural semiconductors

▲ [19p-S221-2] Oxidation of 2-Dimensional Semiconductors and Its Implication towards Applications

▲ [19p-S221-3] CVD growth of atomically-thin transition metal dichalcogenides and their heterostructures

▲ [19p-S221-4] Two-dimensional van der Waals Heterostructures for Advanced Electronics

▲ [19p-S221-5] Surface engineering of two-dimensional atomic crystals for performance enhancement and its application

▼ [19p-S221-6] Single-Layer WS₂ Phototransistor with Multi-Layer Graphene Electrodes
on a Flexible Parylene Substrate

▼ [19p-S221-7] Defect position analysis in MoS₂ FETs by random telegraphic signals

▲ [19p-S221-8] Research development of materials and innovative devices using atomically thin 2D functional films for ubiquitous sensing

Authentication

Sessions

Symposium » Recent progress and future prospects of functional 2-dimensional materials

[19a-S221-1~5] Recent progress and future prospects of functional 2-dimensional materials

▲ [19a-S221-1] Opening Address

▲ [19a-S221-2] Application of Layered Chalcogenide Materials to Atomic Layer Electronics

▲ [19a-S221-3] Electronic and optical properties of monoclinic MoTe2

▲ [19a-S221-4] Valley physics in 2D crystals of transition metal dichalcogenides

▲ [19a-S221-5] Selective deformation of monolayer MoS2 by illuminating laserand magnetotransport of 2D materials probed up to 60 T

[19p-S221-1~8] Recent progress and future prospects of functional 2-dimensional materials

▲ [19p-S221-1] Atomically thin hetero-structural semiconductors

▲ [19p-S221-2] Oxidation of 2-Dimensional Semiconductors and Its Implication towards Applications

▲ [19p-S221-3] CVD growth of atomically-thin transition metal dichalcogenides and their heterostructures

▲ [19p-S221-4] Two-dimensional van der Waals Heterostructures for Advanced Electronics

▲ [19p-S221-5] Surface engineering of two-dimensional atomic crystals for performance enhancement and its application

▼ [19p-S221-6] Single-Layer WS2 Phototransistor with Multi-Layer Graphene Electrodeson a Flexible Parylene Substrate

▼ [19p-S221-7] Defect position analysis in MoS2 FETs by random telegraphic signals

▲ [19p-S221-8] Research development of materials and innovative devices using atomically thin 2D functional films for ubiquitous sensing

Authentication

▲ [19a-S221-3] Electronic and optical properties of monoclinic MoTe₂

▲ [19a-S221-5] Selective deformation of monolayer MoS₂ by illuminating laser
and magnetotransport of 2D materials probed up to 60 T

▼ [19p-S221-6] Single-Layer WS₂ Phototransistor with Multi-Layer Graphene Electrodes
on a Flexible Parylene Substrate

▼ [19p-S221-7] Defect position analysis in MoS₂ FETs by random telegraphic signals