[19a-H112-1~8] 15.1 Bulk crystal growth

[19a-H112-2] Lateral Dopant Segregation of β-Ga₂O₃ Single Crystals by Edge-defined Film-fed Growth (EFG) Method

〇Shinya Watanabe¹, Kimiyoshi Koshi¹, Yu Yamaoka¹, Takekazu Masui¹, Akito Kuramata¹, Shigenobu Yamakoshi¹ (1.Tamura Corp.)

Keywords:Gallium Oxide,Edge-defined Film-fed Growth,Segregation

Controlling the segregation of dopants and impurities is a major concern in the growth of semiconductor crystals for use as electronic devices. Distribution occurs in the thickness direction in crystals grown with the edge-defined film-fed growth (EFG) method. We grew 2-inch-wide crystals of impurity doped β-Ga₂O₃ that were 6 mm and 18 mm thick by using the EFG method. We report an analysis using a simple model in which the dopant flows from thickness center toward the end in the melt for determining the lateral dopant distribution and segregation coefficient. The dopant concentration is in close agreement with the results of a fitting to the normal freezing equation.