[19a-H112-1~8] 15.1 Bulk crystal growth

[19a-H112-6] Tilting effects of ellipsoidal mirror on crystal growth of silicon by IR-FZ method

〇Satoshi Watauchi¹, Md. Mukter Hossain¹, Masanori Nagao¹, Isao Tanaka¹ (1.Univ. of Yamanashi)

Keywords:infrared convergent heating floating zone method,silicon,crystal growth

Tilting effects of ellipsoidal mirror on the growth of silicon single crystals by mirror tilting were carefully studied. The stability of the molten zone was enhanced by the mirror tilting. Although it was impossible to grow silicon crystals ofφ45 without mirror tilting, it was found to be possible to those ofφ45 in 10 degree tilted condition. There are no clear differences in the interface shape of the molten zone.
Although the major characterizing parameters such as convexities were found to be independent of the mirror tilting, the curvatures of the interface were found to be affected by the mirror tilting. The changes of the curvatures by the mirror tilting were consistent with the enhancement of the molten zone by the mirror tilting.