[19a-H112-1~8] 15.1 Bulk crystal growth

[19a-H112-8] Numerical Simulation on InGaSb Crystal Growth on International Space Station

〇Yasunori Okano^1,2,3, Jin Xin¹, Takuya Yamamoto¹, Youhei Takagi¹, Yasuhiro hayakawa², Yuko Inatomi³ (1.Osaka Univ., 2.RIE, Shizuoka Univ., 3.JAXA)

Keywords:International Space Station,Numerical Simulation,shape of interface

Numerical simulation was performed for InGaSb grown on board in Internatinal Space Station. Numerical results succesfully explain shapes of interfaces observed in the experimental results obtained from space sample.