[19a-H116-1~12] 3.16 Optics and Photonics English Session

▼ [19a-H116-9] Aluminum Infrared Perfect Absorbers for Wavelength Selective Devices

〇(P)DAO Thang^1,2、Ishii Satoshi^1,2、Chen Kai^1,2、Yokoyama Takahiro^1,2、Nabatame Toshihide^1,2、Nagao Tadaaki^1,2,3 (1.International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan、2.CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan、3.Department of Condensed Matter Physics, Graduate School of Science, Hokkaido University, Sapporo 060-0810, Japan)

キーワード：Plasmonic perfect absorber,Selective IR emitter,Selective IR detector

Abstract: Plasmonic perfect absorbers, which metamaterials can exhibit nearly 100% absorptivity at desired wavelengths, have been successfully used in a wide range of applications in photonics and optoelectronics such as wavelength-selective thermal emitters [1] and bio sensors [2]. In this report, we present our recent work on the development of colloidal lithography technique to fabricate large-area plasmonic perfect absorbers using Al, which is an earth abundant low-cost plasmonic material in contrast to Au and Ag. Using numerical electromagnetic simulations, we optimize the geometrical parameters of the Al perfect absorbers (AlPAs) with resonance at curtain wavelength depending on the applications. The fabricated AlPAs exhibit narrowband absorptions with high efficiency up to 98 %. By tuning AlPA parameters, the resonance of AlPA can be tuned from VIS to MIR region. We also demonstrate three applications of the AlPAs, including selective thermal emitters (Fig. 1a) [1], selective surface-enhanced vibrational spectroscopy (SEIRA) for molecular sensing (Fig. 1b) [2] and selective IR detectors (Fig. 1c) [3]. The results obtained here reveal a simple technique to fabricate scalable plasmonic perfect absorbers as well as their potential applications in optoelectronic and photonic devices.