[19a-P4-1~31] 12.4 Organic light-emitting devices and organic transistors

[19a-P4-3] Improving the carrier mobility of pentacene thin film transistors by surface treatment of polysilsesquioxane gate dielectric layers

〇Daisuke Michiura¹, Yoshio Nakahara¹, Kazuyuki Uno¹, Ichiro Tanaka¹ (1.Wakayama Univ.)

Keywords:organic transistor,gate dielectric layer,polysilsesquioxane

We improved the carrier mobility of the pentacene thin film transistors, which were fabricated with polysilsesquioxane (PSQ) gate dielectric layers, from 0.082 to 0.32 cm²/Vs in average by treating the PSQ surface with UV/O₃ and 1,1,1,3,3,3-hexamethyldisilazane. It was found that the surface of the PSQ layers was smoothened by the UV/O₃ treatment. Thus, it is considered that the carrier mobility was improved because of the smoother gate dielectric layer and larger grain size.