[19a-S221-1~5] 日韓ジョイントシンポ：機能性２次元材料の現状と新展開

▲ [19a-S221-2] Application of Layered Chalcogenide Materials to Atomic Layer Electronics

〇上野 啓司¹ (1.埼玉大院理工)

キーワード：transition metal dichalcogenide,layered material

Since the discovery of a processing method for graphene, other two-dimensional (2D) materials have received intense research interest. Among the 2D materials, transition-metal dichalcogenides (MX₂s) are an interesting group of materials with a wide range of electronic properties that includes semiconductors, semimetals, metals, and superconductors. Among the MX₂ compounds, most of the group 6 transition-metal (Mo, W) dichalcogenides have a band gap. The existence of a band gap in 2D MX₂, in contrast to zero-gap graphene, allows the fabrication of a field-effect transistor (FET) equipped with a large on-off ratio, which is indispensable for the low-power operation of electronic circuits. At the symposium, I will introduce basic properties of MX₂, experimental techniques required for the chemical vapor transport growth of MX₂ single crystals, and some results of characterizing thin film FETs fabricated from single crystals of MoS₂, 2H-MoTe₂ and WSe₂.