11:00 〜 11:30
▲ [19a-S221-4] Valley physics in 2D crystals of transition metal dichalcogenides
キーワード：transition metal dichalcogenides,2D crystals,transistor
2D crystals of layered materials and their heterostructures are eagerly being explored as platforms for nano-sized opto-electronic devices. Group-VIB Transition-metal dichalcogenides (TMDs), exemplified members of semiconducting layered materials, have manifested their potentials not only for fundamental transistor but also for thermoelectricity, piezoelectricity, and laser action. Of particular importance is their potential for charge-less electronics based on spin and valley degrees of freedom, which distinguishes and specialises group-VIB TMDs from other semiconducting layered materials.
To date, researches, which are aiming at utilizing valley degree of freedom as information carrier, have demonstrated coherent transfer between optical polarization and valley degree of freedom and electrically-polarization-tunable circularly-polarized-LED as well as its reverse process. In this talk, we will present fundamental properties of group-VIB TMD devices, followed by optical responses based on valley degree of freedom and unique device functionalities.
To date, researches, which are aiming at utilizing valley degree of freedom as information carrier, have demonstrated coherent transfer between optical polarization and valley degree of freedom and electrically-polarization-tunable circularly-polarized-LED as well as its reverse process. In this talk, we will present fundamental properties of group-VIB TMD devices, followed by optical responses based on valley degree of freedom and unique device functionalities.