[19a-S223-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19a-S223-4] An investigation of the convolution method for Monte Carlo Ion Implantation

〇Yasuyuki Ohkura¹, Ken Yamaguchi¹, Hideaki Koike¹ (1.AdvanceSoft Corp.)

Keywords:3D Monte Carlo method for ion implantation process,convolution integral

Advance/TCAD Process Simulator has been developed including a new robust, high-speed topographical algorithm for deposition and etching, and the application of 3D Monte Carlo method for ion implantation to silicon and silicon carbide.
This paper reports application of the convolution for ion implantation model.