[19a-S224-1~10] 13.6 Semiconductor English Session

▲ [19a-S224-2] Poly-Si thin film transistor on (100)-dominantly Si film using MLB-CLC with overlapping

〇(D)Nguyen Thuy Thi¹、Hirata Tatsuaki¹、Kuroki Shin-Ichiro¹ (1.The rearch institute for Nanodevice and Bio system, Hiroshima University)

キーワード：TFT

Continuous-Wave Laser Lateral Crystallization (CLC) technology with Multi-Line Beam (MLB) has realized a (211) oriented poly Si crystalline film and high performance thin film transistors (TFTs). In order to improve the uniformity and electrical properties of (TFTs), overlapping irradiation method was developed to form (100)-dominantly poly Si film by MLB-CLC. Si grains with the size of about 50x2 µm2 were dominantly oriented at (100). ID-VG characteristics of TFT (W=20 µm; L=10 µm) fabricated on this film obtain ON/OFF ratio of 10^4, threshold voltage of -0.11 V, subthreshold slope of 0.13, and electron mobility of 220 cm2/Vs.