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▼ [19a-S224-5] Investigation of Bilayer HfN Gate Insulator Formed by ECR Plasma Sputtering
Keywords:ECR plasma sputtering,Hafnium nitride,High-k gate insulator
We have demonstrated n-MISFET with in-situ formation of bilayer HfN gate insulator utilizing ECR plasma sputtering for the first time. The superior electrical properties, especially the saturation mobility, are significantly related to the improvement of the interface qualities by using bilayer HfN gate insulator.