[19a-S224-1~10] 13.6 Semiconductor English Session

▼ [19a-S224-5] Investigation of Bilayer HfN Gate Insulator Formed by ECR Plasma Sputtering

〇(D)Atthi Nithi¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Keywords:ECR plasma sputtering,Hafnium nitride,High-k gate insulator

We have demonstrated n-MISFET with in-situ formation of bilayer HfN gate insulator utilizing ECR plasma sputtering for the first time. The superior electrical properties, especially the saturation mobility, are significantly related to the improvement of the interface qualities by using bilayer HfN gate insulator.