[19a-S224-1~10] 13.6 Semiconductor English Session

▼ [19a-S224-5] Investigation of Bilayer HfN Gate Insulator Formed by ECR Plasma Sputtering

〇(D)Nithi Atthi¹、Ohmi Shun-ichiro¹ (1.Tokyo Tech)

キーワード：ECR plasma sputtering,Hafnium nitride,High-k gate insulator

We have demonstrated n-MISFET with in-situ formation of bilayer HfN gate insulator utilizing ECR plasma sputtering for the first time. The superior electrical properties, especially the saturation mobility, are significantly related to the improvement of the interface qualities by using bilayer HfN gate insulator.