[19a-S224-1~10] 13.6 Semiconductor English Session

▲ [19a-S224-7] InGaN Quantum Nanodisks by Fusion of Bio-nano-template and Neutral Beam Etching processes

〇Akio Higo¹, Cedric Thomas², Chang Yong Lee², Takayuki Kiba³, Shula Chen⁴, Tomoyuki Tanikawa⁵, Shigeyuki Kuboya⁵, Ryuji Katayama⁵, Kanako Shojiki⁵, Ichiro Yamashita⁶, Akihiro Murayama⁴, Seiji Samukawa^1,2 (1.AIMR, Tohoku Univ., 2.IFS, Tohoku Univ., 3.Kitami Inst. Tech, 4.IST, Hokkaido Univ., 5.IMR, Tohoku Univ., 6.NAIST)

Keywords:InGaN,quantum nanodisks

Since III-N semiconductor quantum dots (QDs) have been proposed, various growth techniques have been developed and QDs optical devices have been proposed. QDs are fabricated by the Straski-Krastanow (S-K) epitaxial growth, however, it is very difficult to preciously control the size and thickness independently. We have already proposed combination of bio-template for nano-patterning and damage-less neutral beam etching (NBE) for realizing QDs by III-N compound materials. In this study, we have developed a top-down fabrication process and realized InGaN quantum nanodisk structures embedded GaN barriers with less than 10 nm in diameter.