2016年第63回応用物理学会春季学術講演会

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一般セッション(口頭講演)

13 半導体 » 13.6 Semiconductor English Session

[19a-S224-1~10] 13.6 Semiconductor English Session

2016年3月19日(土) 09:00 〜 11:45 S224 (南2号館)

上野 智雄(農工大)、章 国強(NTT物性研)

11:15 〜 11:30

[19a-S224-9] Effect of non-halide lead precursors on CH3NH3PbI3 perovskite for photovoltaic applications

SINGH TRILOK1、Miyasaka Tsutomu1 (1.Toin Uni. of Yokohama)

キーワード:Perovskite materials,semiconductor,Hybrid materials

Organic-inorganic perovskite structured semiconductors (CH3NH3PbX3, X= Br, Cl, I) have gained a lot of attention as light harvesters in thin film photovoltaic cells (PVCs) due to their unique light absorption, charge carrier transport properties and low cost. In last five years the power conversion efficiency has exceeds 21%, however there is still a huge possibility of improvement to reach near the theoretical limit (31%). Furthermore, in order to optimize device performance and long term stability, better understanding of the general working principle of these optoelectronic devices with respect to various permutation and combination are needed. There have been a plenty of literature on the fabrication of organic–inorganic metal halide perovskite thin films with most of the processes limited to halide based anions as starting materials.
This presentation will focus on the role of the various anions in the perovskite solution and their influence on perovskite solar cell in particular, perovskite crystal growth, film formation and device performance. Our recent finding showed that a non-halide lead source (lead acetate and lead propionate) instead of lead chloride or iodide, the perovskite crystal growth is much faster and resultant films are very smooth. Further the careful modifications of fabrication process led high efficiency (> 18.5%) with high open circuit voltage (Voc= 1.09 V).