Optical properties in InGaN / GaN MQW heated in hydrogen environment and Fabrication of nano-structures by hydrogen environment anisotropic thermal etching (HEATE)

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Sat. Mar 19, 2016 1:15 PM - 6:00 PM H121 (H)

Munetaka Arita(Univ. of Tokyo), Jitsuo Ohta(Univ. of Tokyo), Kazunobu Kojima(Tohoku Univ.)

4:30 PM - 4:45 PM

〇(B)Shun Ishijima¹, Kohei Ogawa¹, Mizutani Tomoya¹, Hachiya Ryo¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia nanotechnology center)

Keywords:nitride semiconductor,nano structure,etching