[19p-H121-1~16] 15.4 III-V-group nitride crystals

[19p-H121-2] Variation of the optical properties of single GaN interface-fluctuation quantum dots with making AlGaN matrix free standing

〇Munetaka Arita^1,2, Satoshi Kako^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo)

Keywords:nitride semiconductors,quantum dots,biaxial strain

We investigated the variation of the optical properties of single GaN interface-fluctuation quantum dots with making AlGaN matrix free standing, in order to design a strong coupling system between a single nitride quantum dot and a photonic crystal nanocavity. The measured blueshift of the emission peak energy might be explained by factors reflecting the size and shape anisotropy of the quantum dot, as well as by the variation of the strain and the internal electric field.