[19p-H121-1~16] 15.4 III-V-group nitride crystals

[19p-H121-6] Growth mechanisms and critical column diameter in InGaN nanocolumns

〇(PC)Takao Oto¹, Yutaro Mizuno¹, Ai Yanagihara¹, Rin Miyagawa¹, Tatsuya Kano¹, Jun Yoshida¹, Naoki Sakakibara¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech. Res. Center)

Keywords:nanocolumn,nanowire,InGaN

Growth mechanism and critical column diameter were discussed in InGaN on GaN nanocolumns (NCs) with various column diameter D_GaN. InGaN column diameter D_InGaN corresponded to D_GaN with increasing D_GaN up to the critical value D_c. However, with further increase in D_GaN, D_InGaN became D_c and core-shell structure was spontaneously formed. Moreover, misfit dislocations were not observed in any NCs. These results were derived from minimizing the total strain energy and therefore InGaN NCs with only D_InGaN≤D_c were grown.