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▲ [19p-P1-62] Resistance modulation by Rashba-Edelstein-like interfacial effect in CoFe/Cu/BiO films
Keywords:Rashba-Edelstein effect,magneoresistance,spin current
So far, spin and charge current conversion by spin-orbit interaction leads several interesting novel phenomena. Recent reports indicate even the longitudinal resistance of ferromagnetic material (FM)/heavymetal (HM) bilayer can be modulated by combined effect of direct and inverse spin Hall effect, which is called to spin Hall magnetoresistance (SMR) [1,2]. Main mechanism of the SMR is distinctive absorption and reflection of spin current dependent on magnetization of the FM layer. With the same logic, we can also expect the modulation of longitudinal resistance in system with large interfacial effect for spin-charge current conversion, e.g. Rashba-Edelstein effect. Here we reported the novel magnetoresistance by spin accumulation originated from the Rashba-Edelstein-like interfacial effect at Cu/BiO interface.
CoFe (5)/Cu (0-30)/BiO (20) (unit:nm) film stacks was deposited on shadow masked Si substrate with using the electron beam evaporation. Here the photo-lithography method was used to pattern the Hall bar shaped shadow mask. The resistance measurement was performed with four-point probe method as a function of magnitude or angle of external field. The resistance drop was commonly shown when external field with transverse to current (Hy) or out of plane (Hz) direction was induced. Above all, well-known anisotropic magnetoresistance (AMR) plays a role for the resistance drop for both of cases. Particularly, additional resistance drop was observed when the external Hy was induced. This additional drop of the resistance clearly shows that there is modulation of resistance by Rashba-Edelstein-like interfacial effect. Further information and discussion will be given.
[1] H. Nakayama et al., Phys. Rev. Lett. 110, 206601 (2013).
[2] J. Kim et al., arXiv:1503:08903.
CoFe (5)/Cu (0-30)/BiO (20) (unit:nm) film stacks was deposited on shadow masked Si substrate with using the electron beam evaporation. Here the photo-lithography method was used to pattern the Hall bar shaped shadow mask. The resistance measurement was performed with four-point probe method as a function of magnitude or angle of external field. The resistance drop was commonly shown when external field with transverse to current (Hy) or out of plane (Hz) direction was induced. Above all, well-known anisotropic magnetoresistance (AMR) plays a role for the resistance drop for both of cases. Particularly, additional resistance drop was observed when the external Hy was induced. This additional drop of the resistance clearly shows that there is modulation of resistance by Rashba-Edelstein-like interfacial effect. Further information and discussion will be given.
[1] H. Nakayama et al., Phys. Rev. Lett. 110, 206601 (2013).
[2] J. Kim et al., arXiv:1503:08903.