[19p-P2-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19p-P2-5] Simulation of Reverse Recovery Time for Self-bias Channel Diode With Super Junction Structure

〇(M1)Hirotaka Tsushima¹, Tsugutomo Kudoh², Fumihiko Sugawara¹ (1.Tohoku Gakuin Univ., 2.Kanagawa Inst. of Tech.)

Keywords:self-biased channel diode,super junction structure,reverse recovery characteristics

A self-biased channel diode (SBCD) that self-biases a channel diode using a DMOSFET structure has recently been proposed. This diode is a low loss and thermally stable. But it has a trade-off relationship between the on-state voltage and the breakdown voltage, and thus, this problem needs to be resolved. To date, by device simulation using the Atlas, it has been confirmed that the breakdown voltage can be greatly improved without increasing the on-state voltage. In this paper, we report the simulation results of the reverse recovery characteristics for the SBCD with a super junction.