[19p-P4-1~17] 13.5 Semiconductor devices and related technologies

△ [19p-P4-13] Effect of parasitic MOSFET on excited states in Si single-electron transistors

〇Takahumi Uchida¹, Hikaru Satoh¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Akira Fujiwara², Yasuo Takahashi¹ (1.IST. Hokkaido Univ, 2.NTT Basic Research Labs)

Keywords:single electron,silicon