[19p-P4-1~17] 13.5 Semiconductor devices and related technologies

▲ [19p-P4-15] Effects of phonons and discrete dopants on band-to-band tunneling in two-dimensional Si pn junction diodes

〇Daniel Ioan Moraru^1,2, Hoang Nhat Tan¹, Ryosuke Unno¹, Takeshi Mizuno¹, Manoharan Muruganathan³, Le The Anh³, Ratno Nuryadi⁴, Hiroshi Mizuta^3,5, Michiharu Tabe¹ (1.RIE, Shizuoka Univ, 2.Fac.Eng, ShizuokaU, 3.JAIST, 4.AAAT, Indonesia, 5.Univ. Southampton)

Keywords:Si nanoscale Esaki diode,discrete dopant-atoms,phonon-assisted tunneling

Si pn junction diodes are fundamental devices for electronics, and their miniaturization into nanoscale is expected to reveal new physics related to the low-dimensionality and dopant individuality. In previous reports, we identified the role of discrete dopants working as traps in downscaled pn diodes doped with moderate doping concentrations. Here, we characterize high-concentration pn diodes (Esaki tunnel diodes), with band-to-band tunneling transport significantly affected by two factors: (i) discrete dopants; (ii) phonon assistance.