[19p-P4-1~17] 13.5 デバイス／集積化技術

▲ [19p-P4-15] Effects of phonons and discrete dopants on band-to-band tunneling in two-dimensional Si pn junction diodes

〇Moraru Daniel Ioan^1,2、Tan Hoang Nhat¹、Unno Ryosuke¹、Mizuno Takeshi¹、Muruganathan Manoharan³、Anh Le The³、Nuryadi Ratno⁴、Mizuta Hiroshi^3,5、Tabe Michiharu¹ (1.RIE, Shizuoka Univ、2.Fac.Eng, ShizuokaU、3.JAIST、4.AAAT, Indonesia、5.Univ. Southampton)

キーワード：Si nanoscale Esaki diode,discrete dopant-atoms,phonon-assisted tunneling

Si pn junction diodes are fundamental devices for electronics, and their miniaturization into nanoscale is expected to reveal new physics related to the low-dimensionality and dopant individuality. In previous reports, we identified the role of discrete dopants working as traps in downscaled pn diodes doped with moderate doping concentrations. Here, we characterize high-concentration pn diodes (Esaki tunnel diodes), with band-to-band tunneling transport significantly affected by two factors: (i) discrete dopants; (ii) phonon assistance.