[19p-P4-1~17] 13.5 Semiconductor devices and related technologies

△ [19p-P4-8] Fabrication and characterization of quantum dot devices using ultrathin SOI

〇Takao Nishino^1,2, Soichiro Hiraoka^1,2, Satoshi Ihara^1,2, Tetsuo Kodera^1,2, Shunri Oda^1,2 (1.Dept. of Phys. Electron, Tokyo Tech, 2.QNERC, Tokyo Tech)

Keywords:quantum dot,ultrathin,silicon