The 63rd JSAP Spring Meeting, 2016

Presentation information

Poster presentation

9 Applied Materials Science » 9.1 Dielectrics, ferroelectrics

[19p-P9-1~7] 9.1 Dielectrics, ferroelectrics

Sat. Mar 19, 2016 4:00 PM - 6:00 PM P9 (Gymnasium)

4:00 PM - 6:00 PM

[19p-P9-2] Effect of Mg and Nb Co-doping on AlN Piezoelectric Thin Film

Masato Uehara1,3, 〇(M1)Hokuto Shigemoto3, Toshimi Nagase1, Yasuhiro Aida2, Keiichi Umeda2, Morito Akiyama1 (1.AIST, 2.Murata Mfg. Co., Ltd., 3.Kyushu Univ.)

Keywords:Piezoelectric Thin Film,Aluminum Nitride,Elements doping

Wurtzite structure AlN has known as a piezoelectric material. Akiyama et al. has shown that the Sc-doped AlN has a high piezoelectric coefficient, d33 and a figure of merit. Then this material is a candidate for microphone and MEMS devices. However, Sc is not widely used in the industrial field and then the cost is expensive, and the some groups have researched alternative elements for Sc. We have found that the co-doping of Mg and Nb is effective for the improvement of d33. In this paper, we will discuss the properties and structure of this material.