[19p-P9-1~7] 9.1 Dielectrics, ferroelectrics

[19p-P9-2] Effect of Mg and Nb Co-doping on AlN Piezoelectric Thin Film

Masato Uehara^1,3, 〇(M1)Hokuto Shigemoto³, Toshimi Nagase¹, Yasuhiro Aida², Keiichi Umeda², Morito Akiyama¹ (1.AIST, 2.Murata Mfg. Co., Ltd., 3.Kyushu Univ.)

Keywords:Piezoelectric Thin Film,Aluminum Nitride,Elements doping

Wurtzite structure AlN has known as a piezoelectric material. Akiyama et al. has shown that the Sc-doped AlN has a high piezoelectric coefficient, d₃₃ and a figure of merit. Then this material is a candidate for microphone and MEMS devices. However, Sc is not widely used in the industrial field and then the cost is expensive, and the some groups have researched alternative elements for Sc. We have found that the co-doping of Mg and Nb is effective for the improvement of d₃₃. In this paper, we will discuss the properties and structure of this material.