Carrier dynamics in an InGaN single QW studied by the SNOM transient lens method

Presentation information

Symposium

Symposium » Blazing frontier of luminescence imaging for characterization of semiconductor crystals and devices

[19p-S011-1~11] Blazing frontier of luminescence imaging for characterization of semiconductor crystals and devices

Sat. Mar 19, 2016 1:30 PM - 5:45 PM S011 (S0)

Yasuaki Ishikawa(NAIST), Ryuji Katayama(Tohoku Univ.), Hiroshi Yano(Univ. of Tsukuba)

5:00 PM - 5:15 PM

〇Masahiro Tsukamoto¹, Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

Keywords:transient lens method,Scanning Near-field Optical Microscope,carrier dynamics

サファイア基板上緑色発光InGaN単一量子井戸構造の試料に関して，近接場光学顕微鏡を用いた過渡レンズマッピング測定とPLマッピング測定を同一領域にて行った結果を提示し，キャリアの再結合ダイナミクスに関する検討を行う予定である．