13:45 〜 14:15
▲ [19p-S221-1] Atomically thin hetero-structural semiconductors
キーワード：atomically thin semiconductor
Using atomic-scale thin film of metal dichalcogenides layered material, we have developed semiconducting channel for future electronics. We investigated optical properties and transport properties, particularly scattering property of carrier transport in field effect transistors (FETs). In this transport experiment, we characterized one of the important properties of the TMDs for electronics.