[19p-S223-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19p-S223-1] NEGF simulation based on a random-matrix model of confined phonons

Gennady Mil'nikov¹, 〇Nobuya Mori¹ (1.Osaka Univ.)

Keywords:device simulation,nanowire,parallel computing

We have developed a parallelized NEGF device simulator based on a random-matrix model of confined phonons.