The 63rd JSAP Spring Meeting, 2016

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Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19p-S223-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sat. Mar 19, 2016 3:30 PM - 6:00 PM S223 (S2)

Tomo Ueno(TUAT), Koichiro Saga(Sony)

4:15 PM - 4:30 PM

[19p-S223-4] Analysis of Increased Ionization Energy in Heavily Doped Thin Si Films by Dielectric Mismatch

〇Takahisa Tanaka1, Takahashi Tsunaki1, Uchida Ken1 (1.Keio Univ.)

Keywords:Ionization Energy,Thin Film