Evaluation of Hot-Carrier-Induced RTN and Generated Oxide Traps

WATARU OSAWA; Toshiaki Tsuchiya

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[19p-S423-1~17] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Sat. Mar 19, 2016 1:45 PM - 6:15 PM S423 (S4)

Tomoji Nakamura(Fujitsu Lab.), Kuniyuki Kakushima(Titech)

5:15 PM - 5:30 PM

[19p-S423-14] Evaluation of Hot-Carrier-Induced RTN and Generated Oxide Traps

〇(M2)WATARU OSAWA¹, Toshiaki Tsuchiya¹ (1.Shimane Univ.)

Keywords:semiconductor,random telegraph noise,hot carrier stress

We showed that oxide traps are generated by hot carrier stress in MOSFETs, and random telegraph noise is induced by the generated trap. Moreover, we evaluated the distance from the Si/SiO₂ interface and the energy level of the generated trap.