[19p-W241-1~1] 8.9 Plasma Electronics Invited Talk

[19p-W241-1] [INVITED] Recent Development and Future Prospects of SiC Power Devices

〇Tatsuo Oomori¹ (1.MItsubishi Electric Corp.)

Keywords:SiC,power devices,plasma etching

My research began with plasma etching first, and an object gradually spread to device development, and the development of SiC power devices has become important recently. The power devices using wideband gap semiconductors such as SiC enable lower loss and higher efficiency operation are putting into practical use. In this talk, I will present recent development and future prospects of the SiC power devices and expectation to Plasma Electronics