[19p-W241-2~12] 10.4 Semiconductors, organic, optical, and quantum spintronics

▼ [19p-W241-11] Observation of spin relaxation in GaAs/GaAsP strained-compensated superlattice

〇shunsuke ohki¹, Xiuguang Jin², Masaki Asakawa¹, Tomoki Ishikawa¹, Atsushi Tackeuchi¹ (1.Waseda Univ., 2.KEK)

Keywords:spin-polarized electron source,spin relazation,superlattice

In this research, we investigated the spin relaxation for GaAs/GaAsP strained-compensated superlattice (SL) by time-resolved spin-dependent pump amd probe reflectance measurements. The measured spin relaxation time of GaAs/GaAsP strain-compensated SL is 104 ps and slower than that of conventional GaAs MQW. This result indicates that GaAs/GaAsP strain-compensated SL is suitable for the highly spin-polarized electron source. I think this research has the important meaning that can contribute to elucidation of the most suitable structure as a spin polarized electron source.