[20a-H101-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[20a-H101-1] Effect of Supersaturation of SiC on Growth Rate in Solution Growth of SiC Single Crystal Using Cr Solvent

〇Ryo Miyasaka¹, Taka Narumi¹, Sakiko Kawanishi^2,3, Hideaki Sasaki², Takeshi Yoshikawa², Masafumi Maeda² (1.Univ. of Tokyo, 2.IIS, Univ. of Tokyo, 3.IMRAM, Tohoku Univ.)

Keywords:silicon carbide,solution growth,supersaturation

Solution growth of SiC single crystal using Cr solvent was expected to realize the rapid growth according to the remarkably high solubility of carbon in molten Cr. It was found that supersaturation of carbon at the growth interface strongly affected on the growth rate of SiC and it was suggested that the less ratio of supersaturation to solubility made the interface smoother.