10:30 AM - 10:45 AM
[20a-H103-7] Defect characterization of homoepitaxial diamond (100) films grown with oxygen addition
Keywords:thin film,diamond,defect
With the aim of improving the crystalline quality of diamond, we have studied for diamond thin-film growth under high oxygen concentration condition. Defects localized on the substrate surface were effectively removed by applying this condition and the formation of characteristic defects was suppressed. At the same time, we recognized some sort of defects remained in the diamond film. In this talk, we will report on the result of characterization for these defects.