[20a-H112-1~10] 15.5 Group IV crystals and alloys

△ [20a-H112-5] Non-Thermal Equilibrium Growth of Amorphous GeSn on Insulator by Repetition Laser Annealing
- Cooling Rate Dependence of Supersaturated Sn Concentration -

〇Kenta Moto¹, Ryo Matsumura^1,2, Taizo Sadoh¹, Hiroshi Ikenoue¹, Masanobu Miyao¹ (1.ISEE, Kyushu Univ., 2.JSPS Research Fellow)

Keywords:GeSn,laser annealing