Separation of effects of InGaN/GaN superlattice on emission characteristics of InGaN-based light-emitting diodes

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Sun. Mar 20, 2016 8:45 AM - 11:45 AM H121 (H)

Satoshi Kamiyama(Meijo Univ.), Atsushi Yamaguchi(Kanazawa Inst. of Tech.)

9:30 AM - 9:45 AM

〇Kohei Sugimoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ.)

Keywords:GaN,light-emitting diode,superlattice