9:30 AM - 11:30 AM
[20a-P2-2] Hydrogen Desorption Enhancement by Positive Charge at Si Surface
Keywords:surface reaction,hydrogen desorption,Si growth
The origin of 2 kinds of activation energy obtained from the growth rate increase at the higher temperature range found in the PE-CVD growth of hydrogenated amorphous silicon films is shown to be explained by the difference in the amount of positive charge (H+) coming onto the growing surface.
Molecular orbital calcurations are employed to show that the energy loss due to the H2 elimination is reduced in the positively-charged silicon hydride ions compared to the neutral counterparts.
Molecular orbital calcurations are employed to show that the energy loss due to the H2 elimination is reduced in the positively-charged silicon hydride ions compared to the neutral counterparts.