[20a-P4-1~71] 17 Nanocarbon Technology（Poster）

[20a-P4-25] Defects Density Control of Single Domain Epitaxial Graphene on Vicinal Si-face SiC(0001) Substrate by RF-inducution Heating

〇yuma doko¹, takuya wada², kosuke imai¹, akihiro hashimoto¹ (1.Graduate School od Electrical & Electronics Engineering, University of Fukui, 2.Fukui Univ.)

Keywords:graphene,defects density

Large-scale epitaxial graphene on Si-faced SiC(0001) substrate formed by Si sublimation method is very necessary for various applications of graphene such as desalination membranes and interlayers in highly lattice mismatched Ⅲ-nitride crystal growth. In this study, we have tried to clarify the relation between the sublimation temperature and the crystalline quality of the graphene. As a result, we have succeeded to form the graphene with small defects density at higher sublimation temperature.