[20a-S223-1~7] 13.7 Nano structures and quantum phenomena

[20a-S223-3] Strain dependence on workfunction of In(Ga)As surface quantum dots

〇(M1)Tomohiro Kobayashi¹, Ko Takabayashi¹, Yuwei Zhang¹, Fumihiko Yamada¹, Itaru Kamiya¹ (1.Toyota Tech. Inst)

Keywords:quantum dots,workfunction

I-V characteristic of large InAs quantum dots (QD) behave like metal. The characteristic is expected for nanoelectrode application. Recently workfunction dip surrounding InAs QD was found and has been expected tools for I-V characteristic explanation. To reveal the workfunction dip formation, workfunction measurements for In(Ga)As surface QD was performed in this study.