[20a-S224-1~9] 7.3 Micro/Nano patterning and fabrication

[20a-S224-2] A Molecular Simulation of EUV Lithography

〇Akinori Iwai¹, Hiroaki Kawata¹, Yoshihiko Hirai¹, Masaaki Yasuda¹ (1.Osaka Pref. Univ.)

Keywords:EUV lithography,molecular dynamics

A molecular dynamics (MD) simulation of pattern formation in Extreme Ultra Violet (EUV) lithography is performed. The effect of EUV exposure is introduced by the chain scission of PMMA polymer molecule in the MD simulation. The breaking positions in the polymer chain are randomly selected and the rate of chain scission in the resist is set proportional to the exposure intensity distribution preliminarily calculated by the Monte Carlo simulation of photoelectron scattering. The chain scission and the structural relaxation processes are alternately repeated in the exposure simulation. In the development simulation, the PMMA molecules are removed from the structure in ascending order (from smaller molecules to larger ones). The molecule removal and the structural relaxation processes are also alternately repeated.