[20a-S422-1~12] 13.5 Semiconductor devices and related technologies

[20a-S422-10] Anomalous degradation of the low-field mobility in short channel MOSFETs

〇Kenji Natori¹ (1.Tokyo Tech.)

Keywords:MOSFET,low-field mobility,ballistic mobility

The value of low-field mobility in short channel MOSFETs is known to exhibit degradation as the channel length is down-scaled.The ballistic transport in nanoscale MOSFET is known to cause simialr effects. But the degradation observed in experiments is more intense compared to that caused by the ballistic effect, and the mechanism has been unknown. We try to explain the mobility degradation with use of the the fact that the drain is not an ideal electrode and backscatters a part of carriers into the channel again.