[20a-S423-1~9] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

▲ [20a-S423-9] A THz Dynamic Switch with MEMS Metamaterial Method

〇Zhengli Han¹, Takuya Takahashi¹, Hiroshi Toshiyoshi¹ (1.The Univ. of Tokyo)

Keywords:MEMS metamaterial device,THz dynamic switch,SOI wafer

A terahertz (THz) dynamic switch with polarization dependence is proposed with MEMS metamaterial method. The split ring resonators (SRRs) are located on a silicon-on-insulator (SOI) wafer, where the buried oxide (BOX) is etched to let the silicon layer together with the SRRs work as a shutter to control the incident THz wave propagation. Electrostatic actuation is employed for the shutter operation.