[20a-S423-1~9] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

▲ [20a-S423-9] A THz Dynamic Switch with MEMS Metamaterial Method

〇Han Zhengli¹、Takahashi Takuya¹、Toshiyoshi Hiroshi¹ (1.The Univ. of Tokyo)

キーワード：MEMS metamaterial device,THz dynamic switch,SOI wafer

A terahertz (THz) dynamic switch with polarization dependence is proposed with MEMS metamaterial method. The split ring resonators (SRRs) are located on a silicon-on-insulator (SOI) wafer, where the buried oxide (BOX) is etched to let the silicon layer together with the SRRs work as a shutter to control the incident THz wave propagation. Electrostatic actuation is employed for the shutter operation.